AO4813 30v dual p-channel mosfet general description product summary v ds i d (at v gs =-10v) -7.1a r ds(on) (at v gs =-10v) < 25m w r ds(on) (at v gs = -4.5v) < 40m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl c thermal characteristics w 2 1.3 t a =70c junction and storage temperature range -55 to 150 units parameter typ max c/w r q ja 48 74 62.5 maximum junction-to-ambient a v 20 gate-source voltage mj avalanche current c 36 a -27 a the AO4813 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v -7.1 -5.6 -40 drain-source voltage -30 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c i d maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 90 40 g ds g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view soic-8 top view bottom view pin1 g ds rev 9: april 2011 www.aosmd.com page 1 of 6
AO4813 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.5 -2.0 -2.5 v i d(on) -40 a 17 25 t j =125c 24 33 27 40 m w g fs 24 s v sd -0.75 -1 v i s -2.5 a c iss 1040 1250 pf c oss 180 pf c rss 125 175 pf r g 2 4 6 w q g (10v) 19 nc q g (4.5v) 9.6 nc q gs 3.6 nc q gd 4.6 nc t d(on) 10 ns t r 5.5 ns t d(off) 26 ns t f 9 ns t rr 11.5 ns q rr 25 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-7.1a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =2.2 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance turn-off fall time total gate charge v gs =-10v, v ds =-15v, i d =-7.1a gate source charge gate drain charge total gate charge on state drain current i s =-1a,v gs =0v v ds =-5v, i d =-7.1a v gs =-4.5v, i d =-5.6a forward transconductance diode forward voltage v gs =-10v, v ds =-5v v gs =-10v, i d =-7.1a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w i f =-7.1a, di/dt=500a/ m s v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage i d =-250 m a, v gs =0v a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 9: april 2011 www.aosmd.com page 2 of 6
AO4813 typical electrical and thermal characteristics 17 52 10 0 18 40 0 10 20 30 40 0 1 2 3 4 5 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 10 15 20 25 30 35 0 5 10 15 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-4.5v i d =-5.6a v gs =-10v i d =-7.1a 10 20 30 40 50 60 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-7.1a 25c 125c 0 10 20 30 40 50 60 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-3.0v -3.5v -7v -10v -4.5v -5v rev 9: april 2011 www.aosmd.com page 3 of 6
AO4813 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-7.1a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 1 10 100 1 10 100 1000 time in avalanche, t a ( m mm m s) figure 9: single pulse avalanche capability (note c) -i ar (a) peak avalanche current t a =25c t a =100c t a =150c t a =125c rev 9: april 2011 www.aosmd.com page 4 of 6
AO4813 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90c/w rev 9: april 2011 www.aosmd.com page 5 of 6
AO4813 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 9: april 2011 www.aosmd.com page 6 of 6
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